SBC857ALT1G
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- Mfr.Part #
- SBC857ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 30,985
- In Stock ：
- 30,985
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Width :
- 1.4mm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 300mW
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Power Dissipation :
- 300mW
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Continuous Collector Current :
- 100mA
- Length :
- 3.04mm
- Max Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Factory Lead Time :
- 2 Weeks
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 125
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.01mm
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Datasheets
- SBC857ALT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC857ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
SBC857ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
SBC857ALT1G Applications
There are a lot of ON Semiconductor
SBC857ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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