SBC856ALT1G
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- Mfr.Part #
- SBC856ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 12,636
- In Stock ：
- 12,636
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Power Dissipation :
- 300mW
- Pin Count :
- 3
- Radiation Hardening :
- No
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Published :
- 2005
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Voltage (VCEO) :
- 65V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Max Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 3.04mm
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -300mV
- Frequency :
- 100MHz
- Height :
- 1.01mm
- Collector Emitter Breakdown Voltage :
- 65V
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Datasheets
- SBC856ALT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC856ALT1G Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
SBC856ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC856ALT1G Applications
There are a lot of ON Semiconductor
SBC856ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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