SBC848BLT1G
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- Mfr.Part #
- SBC848BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 3,266
- In Stock ：
- 3,266
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 600mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Terminal Finish :
- Tin (Sn)
- Frequency - Transition :
- 100MHz
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Max Frequency :
- 100MHz
- Number of Pins :
- 3
- Published :
- 2009
- Width :
- 1.4mm
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.04mm
- Height :
- 1.01mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 4 Weeks
- Datasheets
- SBC848BLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC848BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
SBC848BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC848BLT1G Applications
There are a lot of ON Semiconductor
SBC848BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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