SBC846BLT3G
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- Mfr.Part #
- SBC846BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 10,852
- In Stock ：
- 10,852
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 65V
- Radiation Hardening :
- No
- Length :
- 3.04mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Collector Current :
- 100mA
- Surface Mount :
- yes
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 600mV
- Height :
- 1.11mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 65V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 2011
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Max Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 65V
- Width :
- 2.64mm
- Transition Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Datasheets
- SBC846BLT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC846BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
SBC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846BLT3G Applications
There are a lot of ON Semiconductor
SBC846BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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