SBC846BLT1G
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- Mfr.Part #
- SBC846BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 23,201
- In Stock ：
- 23,201
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 65V
- Surface Mount :
- yes
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.64mm
- Length :
- 3.04mm
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 80V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 4 Weeks
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 65V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Height :
- 1.11mm
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 600mV
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Datasheets
- SBC846BLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC846BLT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 65V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SBC846BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846BLT1G Applications
There are a lot of ON Semiconductor
SBC846BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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