SBAS116LT1G

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Single

Max Reverse Leakage Current :

80nA

RoHS Status :

ROHS3 Compliant

Width :

1.4mm

Length :

3.04mm

Recovery Time :

3 μs

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Pbfree Code :

yes

Diode Element Material :

SILICON

Base Part Number :

BAS116

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Number of Elements :

1

Average Rectified Current :

200mA

Voltage - Forward (Vf) (Max) @ If :

1.25V @ 150mA

Surface Mount :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Max Repetitive Reverse Voltage (Vrrm) :

75V

Element Configuration :

Single

Current - Reverse Leakage @ Vr :

5nA @ 75V

Max Forward Surge Current (Ifsm) :

500mA

Number of Terminations :

3

Max Reverse Voltage (DC) :

75V

Diode Type :

Standard

Min Operating Temperature :

-55°C

Published :

2009

Max Power Dissipation :

300mW

HTS Code :

8541.10.00.70

Current - Average Rectified (Io) :

200mA DC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature - Junction :

-55°C~150°C

Reference Standard :

AEC-Q101

Reverse Recovery Time :

3 μs

Max Surge Current :

500mA

Height :

1.01mm

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Capacitance @ Vr, F :

2pF @ 0V 1MHz

Terminal Position :

Dual

Factory Lead Time :

5 Weeks

Speed :

Small Signal =< 200mA (Io), Any Speed

Peak Reverse Current :

5nA

Output Current-Max :

0.2A

Forward Current :

200mA

Radiation Hardening :

No

Number of Pins :

3

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)