S72VS256RE0AHBH10
- Mfr.Part #
- S72VS256RE0AHBH10
- Manufacturer
- Infineon Technologies
- Package / Case
- 133-VFBGA
- Datasheet
- Download
- Description
- IC FLASH RAM 256MBIT PAR 133FBGA
- Stock
- 46,375
- In Stock :
- 46,375
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Surface Mount :
- yes
- Voltage - Supply :
- 1.7V~1.95V
- Number of Functions :
- 1
- Memory Interface :
- Parallel
- Series :
- VS-R
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- 133-VFBGA
- Operating Temperature :
- -25°C~85°C TA
- Terminal Pitch :
- 0.5mm
- Supply Voltage-Max (Vsup) :
- 1.95V
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 1.8V
- Supply Voltage-Min (Vsup) :
- 1.7V
- Terminal Position :
- BOTTOM
- Width :
- 8mm
- Memory Density :
- 268435456 bit
- Memory Type :
- Non-Volatile
- Operating Mode :
- SYNCHRONOUS
- Length :
- 8mm
- Organization :
- 16MX16
- Memory Width :
- 16
- Memory Size :
- 256Mbit Flash 2565Mbit DDR DRAM
- Clock Frequency :
- 108MHz
- Additional Feature :
- 256 MBIT (16M X 16 TOP BOOT BLOCK) FLASH MEMORY
- Packaging :
- Tray
- RoHS Status :
- ROHS3 Compliant
- Height Seated (Max) :
- 1mm
- JESD-30 Code :
- S-PBGA-B133
- Qualification Status :
- Not Qualified
- ECCN Code :
- 3A991.B.1.A
- Factory Lead Time :
- 26 Weeks
- Number of Terminations :
- 133
- Memory Format :
- FLASH, RAM
- HTS Code :
- 8542.32.00.71
- Datasheets
- S72VS256RE0AHBH10
VS-R Memory IC VS-R Series 8mm mm
S72VS256RE0AHBH10 Overview
In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tray size. The case is embedded in 133-VFBGA. Memory size on the chip is 256Mbit Flash 2565Mbit DDR DRAM. This device uses takes advantage of the FLASH, RAM format. The device's extended operating temperature range of -25°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. The recommended mounting type for this device is Surface Mount. On the chip, there are 133 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 108MHz range. It also features 256 MBIT (16M X 16 TOP BOOT BLOCK) FLASH MEMORY to boost system performance despite all its merits. VS-R series memory devices play an important role in the applications they target.
S72VS256RE0AHBH10 Features
Package / Case: 133-VFBGA
Additional Feature:256 MBIT (16M X 16 TOP BOOT BLOCK) FLASH MEMORY
S72VS256RE0AHBH10 Applications
There are a lot of Cypress Semiconductor Corp
S72VS256RE0AHBH10 Memory applications.
- eSRAM
- mainframes
- multimedia computers
- networking
- personal computers
- servers
- supercomputers
- telecommunications
- workstations,
- DVD disk buffer
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| S72VS256RE0AHBH13 | Infineon Technologies | 30,400 | IC FLASH RAM 256MBIT PAR 133FBGA |
| S72VS256RE0AHBJ10 | Infineon Technologies | 7,087 | IC FLASH RAM 256MBIT PAR 133FBGA |
| S72VS256RE0AHBJ13 | Infineon Technologies | 6,173 | IC FLASH RAM 256MBIT PAR 133FBGA |
















