S34MS04G100TFB000

Manufacturer :

Infineon Technologies

Product Category :

Memory

Programming Voltage :

1.8V

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

45ns

Terminal Finish :

Matte Tin (Sn)

Memory Density :

4294967296 bit

Operating Mode :

ASYNCHRONOUS

Memory Format :

Flash

Memory Width :

8

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Number of Functions :

1

Mounting Type :

Surface Mount

Supply Voltage-Max (Vsup) :

1.95V

Supply Voltage-Min (Vsup) :

1.7V

Length :

18.4mm

Terminal Position :

Dual

Width :

12mm

Terminal Pitch :

0.5mm

Supply Voltage :

1.8V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Supply :

1.7V~1.95V

Memory Size :

4Gb 512M x 8

HTS Code :

8542.32.00.51

Operating Temperature :

-40°C~105°C TA

Series :

MS-1

RoHS Status :

ROHS3 Compliant

Packaging :

Tray

Height Seated (Max) :

1.2mm

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Non-Volatile

Organization :

512MX8

Number of Terminations :

48

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G48