S34ML02G200TFB000

Manufacturer :

Infineon Technologies

Product Category :

Memory

Write Cycle Time - Word, Page :

25ns

Length :

18.4mm

Memory Format :

Flash

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Width :

12mm

JESD-609 Code :

e3

Number of Functions :

1

Memory Width :

8

Memory Type :

Non-Volatile

Voltage - Supply :

2.7V~3.6V

Terminal Pitch :

0.5mm

Height Seated (Max) :

1.2mm

Supply Voltage-Max (Vsup) :

3.6V

Memory Density :

2147483648 bit

Series :

Automotive, AEC-Q100, ML-2

HTS Code :

8542.32.00.51

Mounting Type :

Surface Mount

Organization :

256MX8

Operating Mode :

ASYNCHRONOUS

Memory Size :

2Gb 256M x 8

Programming Voltage :

3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Supply Voltage-Min (Vsup) :

2.7V

Number of Terminations :

48

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

Supply Voltage :

3V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~105°C TA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G48

Packaging :

Tray