S34ML02G100TFB000

Manufacturer :

Infineon Technologies

Product Category :

Memory

Voltage - Supply :

2.7V~3.6V

Surface Mount :

yes

Supply Voltage-Max (Vsup) :

3.6V

Programming Voltage :

3V

HTS Code :

8542.32.00.51

Supply Voltage :

3.3V

Factory Lead Time :

6 Weeks

Height Seated (Max) :

1.2mm

Series :

ML-1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Operating Temperature :

-40°C~105°C TA

Terminal Finish :

Matte Tin (Sn)

Memory Density :

2147483648 bit

Operating Mode :

ASYNCHRONOUS

Published :

2015

Memory Type :

Non-Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Memory Format :

Flash

Memory Width :

8

Organization :

256MX8

Width :

12mm

JESD-30 Code :

R-PDSO-G48

Terminal Position :

Dual

Packaging :

Tray

Supply Voltage-Min (Vsup) :

2.7V

Memory Size :

2Gb 256M x 8

Mounting Type :

Surface Mount

Terminal Pitch :

0.5mm

Number of Terminations :

48

Memory Interface :

Parallel

Write Cycle Time - Word, Page :

25ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Functions :

1

Length :

18.4mm

Screening Level :

AEC-Q100