S29CD016J0PQFM010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Write Cycle Time - Word, Page :

60ns

Terminal Finish :

Matte Tin (Sn)

Number of Functions :

1

JESD-609 Code :

e3

Data Polling :

yes

Memory Density :

16777216 bit

Supply Voltage-Max (Vsup) :

2.75V

Memory Type :

Non-Volatile

HTS Code :

8542.32.00.51

Supply Current-Max :

0.09mA

Series :

CD-J

RoHS Status :

ROHS3 Compliant

Toggle Bit :

yes

Programming Voltage :

2.7V

Supply Voltage :

2.6V

Surface Mount :

yes

Qualification Status :

Not Qualified

Access Time :

54ns

Number of Terminations :

80

Memory Size :

16Mb 512K x 32

Operating Temperature :

-40°C~125°C TA

Organization :

512KX32

Memory Interface :

Parallel

Packaging :

Tray

Height Seated (Max) :

3.35mm

Terminal Position :

QUAD

Power Supplies :

1.8/2.62.6V

Time@Peak Reflow Temperature-Max (s) :

40

Memory Width :

32

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Standby Current-Max :

0.00006A

Ready/Busy :

yes

Common Flash Interface :

yes

Sector Size :

2K16K

Package / Case :

80-BQFP

Supply Voltage-Min (Vsup) :

2.5V

Memory Format :

Flash

Number of Sectors/Size :

1630

Number of Pins :

80

Peak Reflow Temperature (Cel) :

260

Command User Interface :

yes

Boot Block :

BOTTOM

Voltage - Supply :

1.65V~2.75V

ECCN Code :

EAR99

Operating Mode :

ASYNCHRONOUS

Length :

20mm

Terminal Pitch :

0.8mm

Additional Feature :

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

Width :

14mm

Mounting Type :

Surface Mount

Factory Lead Time :

15 Weeks

Clock Frequency :

66MHz