S25FS512SDSNFV013

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Mfr.Part #
S25FS512SDSNFV013
Manufacturer
Infineon Technologies
Package / Case
8-WDFN Exposed Pad
Datasheet
Download
Description
IC FLASH 512MBIT SPI/QUAD 8WSON
Stock
45,009
In Stock :
45,009

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Manufacturer :
Infineon Technologies
Product Category :
Memory
Package / Case :
8-WDFN Exposed Pad
Series :
FS-S
Memory Interface :
SPI - Quad I/O, QPI
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Alternate Memory Width :
2
Operating Mode :
SYNCHRONOUS
Memory Type :
Non-Volatile
Operating Temperature :
-40°C~105°C TA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
IT ALSO HAVE MEMORY WIDTH X1
Organization :
128MX4
Terminal Pitch :
1.27mm
Memory Size :
512Mb 64M x 8
Clock Frequency :
80MHz
Parallel/Serial :
Serial
Memory Density :
536870912 bit
Voltage - Supply :
1.7V~2V
Supply Voltage-Min (Vsup) :
1.7V
Number of Terminations :
8
HTS Code :
8542.32.00.51
Mounting Type :
Surface Mount
Supply Voltage-Max (Vsup) :
2V
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Programming Voltage :
1.8V
Factory Lead Time :
13 Weeks
Memory Width :
4
JESD-30 Code :
R-PDSO-N8
Number of Functions :
1
Length :
8mm
Width :
6mm
Height Seated (Max) :
0.8mm
Supply Voltage :
1.8V
Memory Format :
Flash
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Datasheets
S25FS512SDSNFV013
Introducing Memory Infineon Technologies S25FS512SDSNFV013 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-WDFN Exposed Pad, Operating Temperature:-40°C~105°C TA, Number of Terminations:8, Mounting Type:Surface Mount, S25FS512SDSNFV013 pinout, S25FS512SDSNFV013 datasheet PDF, S25FS512SDSNFV013 amp .Beyond Memory Infineon Technologies S25FS512SDSNFV013 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies S25FS512SDSNFV013


Memory Infineon Technologies S25FS512SDSNFV013 Overview

The Memory Infineon Technologies S25FS512SDSNFV013 is a state-of-the-art IC FLASH device boasting 512Mbit of storage capacity, engineered by Infineon Technologies. Utilizing both SPI and Quad SPI interfaces, this 8WSON packaged flash memory offers high-speed data transmission and robust reliability, designed for sophisticated, high-performance applications. Its compact form factor ensures that it fits seamlessly into a variety of device architectures, making it an ideal choice for manufacturers looking to integrate scalable memory solutions into their products. With its advanced capabilities, the Memory Infineon Technologies S25FS512SDSNFV013 stands as a pivotal component in enhancing device functionality and data handling efficiencies.

S25FS512SDSNFV013 Features

The S25FS512SDSNFV013 IC FLASH from Infineon Technologies integrates multiple features that set it apart:

  • 512Mbit Storage Capacity: Ample space for high-volume data management.
  • SPI/Quad SPI Interface: Flexible interfacing options allow for high-speed data transfer and compatibility with various microcontrollers.
  • Compact 8WSON Package: Minimizes footprint on circuit boards, ideal for space-sensitive applications.
  • High Reliability: Designed to endure extensive read/write cycles, ensuring data integrity and prolonged device lifespan.
  • Fast Data Access: Accelerates operation speeds, which is critical for high-performance computing environments.

S25FS512SDSNFV013 Applications

  • Embedded Systems: Utilized in complex computational systems for better memory management and faster processing speeds.
  • Consumer Electronics: Integral for devices such as smartphones and tablets to enhance user interface experiences and app functionality.
  • Automotive Applications: Employs robust storage solutions for advanced driver-assistance systems (ADAS) and infotainment systems.
  • Industrial Automation: Serves as a reliable storage backbone for PLCs and other automation controllers, improving operational efficiency and system responsiveness.
  • Internet of Things (IoT) Devices: Provides the necessary data storage capabilities for smart devices, enabling them to perform complex tasks and improve connectivity.
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