S25FS512SAGMFB010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Write Cycle Time - Word, Page :

2ms

Packaging :

Tray

Supply Voltage-Min (Vsup) :

1.7V

Parallel/Serial :

Serial

Supply Voltage-Max (Vsup) :

2V

Supply Voltage :

1.8V

Operating Temperature :

-40°C~105°C TA

Screening Level :

AEC-Q100

JESD-30 Code :

R-PDSO-G16

Surface Mount :

yes

Mounting Type :

Surface Mount

Length :

10.3mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Alternate Memory Width :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Organization :

128MX4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Memory Density :

536870912 bit

Voltage - Supply :

1.7V~2V

Clock Frequency :

133MHz

Operating Mode :

SYNCHRONOUS

Number of Functions :

1

Factory Lead Time :

13 Weeks

Terminal Position :

Dual

Number of Terminations :

16

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Memory Format :

Flash

Terminal Pitch :

1.27mm

Memory Type :

Non-Volatile

Width :

7.5mm

Programming Voltage :

1.8V

Series :

FS-S

Additional Feature :

IT ALSO HAVE MEMORY WIDTH X 1

Memory Interface :

SPI - Quad I/O, QPI

Height Seated (Max) :

2.65mm

Memory Width :

4

Memory Size :

512Mb 64M x 8