S25FL512SDSMFBG10

Manufacturer :

Infineon Technologies

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

1.27mm

Organization :

64MX8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8542.32.00.51

Memory Type :

Non-Volatile

Width :

7.5mm

Screening Level :

AEC-Q100; TS 16949

Operating Temperature :

-40°C~105°C TA

Packaging :

Tray

Number of Functions :

1

JESD-30 Code :

R-PDSO-G16

Additional Feature :

ITS ALSO CONFIGURABLE AS 512MX1

Supply Voltage :

3V

Supply Voltage-Max (Vsup) :

3.6V

Voltage - Supply :

2.7V~3.6V

Operating Mode :

SYNCHRONOUS

Factory Lead Time :

13 Weeks

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Surface Mount :

yes

Memory Interface :

SPI - Quad I/O

Height Seated (Max) :

2.65mm

Memory Size :

512Mb 64M x 8

Terminal Position :

Dual

Memory Density :

512753664 bit

Memory Width :

8

Programming Voltage :

3V

Length :

10.3mm

Alternate Memory Width :

1

Series :

Automotive, AEC-Q100, FL-S

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

16

Clock Frequency :

80MHz

Interface :

SPI, Serial

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

Flash

Mounting Type :

Surface Mount

Supply Voltage-Min (Vsup) :

2.7V