S25FL512SAGMFVG10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Density :

512753664 bit

Number of Functions :

1

Power Supplies :

3/3.3V

Programming Voltage :

3V

Supply Current-Max :

0.061mA

Memory Type :

Non-Volatile

Memory Size :

512Mb 64M x 8

Memory Interface :

SPI - Quad I/O

Standby Current-Max :

0.0001A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

16

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Height Seated (Max) :

2.65mm

Endurance :

100000 Write/Erase Cycles

Write Protection :

HARDWARE/SOFTWARE

JESD-30 Code :

R-PDSO-G16

Width :

7.5mm

Memory Width :

8

Supply Voltage :

3V

Series :

FL-S

JESD-609 Code :

e3

Published :

2013

Alternate Memory Width :

1

Operating Mode :

SYNCHRONOUS

Factory Lead Time :

13 Weeks

Length :

10.3mm

Qualification Status :

Not Qualified

Interface :

SPI, Serial

Operating Temperature :

-40°C~105°C TA

Serial Bus Type :

SPI

Supply Voltage-Min (Vsup) :

2.7V

Clock Frequency :

133MHz

Surface Mount :

yes

Voltage - Supply :

2.7V~3.6V

Additional Feature :

IT ALSO HAVE MEMORY WIDTH X1

Mounting Type :

Surface Mount

Terminal Pitch :

1.27mm

Memory Format :

Flash

Packaging :

Tray

Supply Voltage-Max (Vsup) :

3.6V

Data Retention Time-Min :

20

Organization :

64MX8

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

HTS Code :

8542.32.00.51