S25FL512SAGMFIR11

Manufacturer :

Infineon Technologies

Product Category :

Memory

Peak Reflow Temperature (Cel) :

260

HTS Code :

8542.32.00.51

Supply Voltage :

3V

Data Retention Time-Min :

20

Packaging :

Tube

Memory Width :

8

Operating Supply Voltage :

3V

Supply Current-Max :

0.061mA

Operating Temperature :

-40°C~85°C TA

Clock Frequency :

133MHz

JESD-30 Code :

R-PDSO-G16

Terminal Position :

Dual

ECCN Code :

3A991.B.1.A

Interface :

SPI, Serial

Organization :

64MX8

Number of Functions :

1

Programming Voltage :

3V

Endurance :

100000 Write/Erase Cycles

Standby Current-Max :

0.0001A

Voltage - Supply :

2.7V~3.6V

RoHS Status :

ROHS3 Compliant

Address Bus Width :

32b

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

16

JESD-609 Code :

e3

Write Protection :

HARDWARE/SOFTWARE

Page Size :

512B

Supply Voltage-Min (Vsup) :

2.7V

Memory Format :

Flash

Height Seated (Max) :

2.65mm

Supply Voltage-Max (Vsup) :

3.6V

Surface Mount :

yes

Memory Interface :

SPI - Quad I/O

Mounting Type :

Surface Mount

Alternate Memory Width :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Factory Lead Time :

13 Weeks

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Length :

10.3mm

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Memory Type :

Non-Volatile

Series :

FL-S

Memory Size :

512Mb 64M x 8

Serial Bus Type :

SPI

Terminal Pitch :

1.27mm

Published :

2015

Density :

512 Mb