S25FL512SAGMFBG13

Manufacturer :

Infineon Technologies

Product Category :

Memory

Programming Voltage :

3V

Number of Terminations :

16

Supply Voltage :

3V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Parallel/Serial :

Serial

Operating Temperature :

-40°C~105°C TA

JESD-609 Code :

e3

Alternate Memory Width :

1

Memory Interface :

SPI - Quad I/O

Length :

10.3mm

HTS Code :

8542.32.00.51

Memory Type :

Non-Volatile

Mounting Type :

Surface Mount

Surface Mount :

yes

Organization :

64MX8

Packaging :

Tape and Reel (TR)

Screening Level :

AEC-Q100; TS 16949

Memory Size :

512Mb 64M x 8

Memory Width :

8

Terminal Position :

Dual

Additional Feature :

ITS ALSO CONFIGURABLE AS 512MX1

Memory Format :

Flash

Memory Density :

512753664 bit

Height Seated (Max) :

2.65mm

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Terminal Pitch :

1.27mm

Supply Voltage-Min (Vsup) :

2.7V

Width :

7.5mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Clock Frequency :

133MHz

Supply Voltage-Max (Vsup) :

3.6V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

SYNCHRONOUS

Voltage - Supply :

2.7V~3.6V

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G16

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Series :

Automotive, AEC-Q100, FL-S

Factory Lead Time :

13 Weeks