S25FL512SAGMFBG10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Number of Terminations :

16

Number of Functions :

1

Package / Case :

16-SOIC (0.295, 7.50mm Width)

JESD-609 Code :

e3

Operating Temperature :

-40°C~105°C TA

Voltage - Supply :

2.7V~3.6V

Memory Format :

Flash

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tray

Organization :

64MX8

Factory Lead Time :

13 Weeks

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

3V

Series :

Automotive, AEC-Q100, FL-S

Additional Feature :

ITS ALSO CONFIGURABLE AS 512MX1

Terminal Position :

Dual

Mounting Type :

Surface Mount

Memory Type :

Non-Volatile

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

3.6V

HTS Code :

8542.32.00.51

Alternate Memory Width :

1

Programming Voltage :

3V

JESD-30 Code :

R-PDSO-G16

Memory Size :

512Mb 64M x 8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Density :

512753664 bit

Screening Level :

AEC-Q100; TS 16949

Length :

10.3mm

Surface Mount :

yes

Clock Frequency :

133MHz

Width :

7.5mm

Memory Width :

8

Memory Interface :

SPI - Quad I/O

Parallel/Serial :

Serial

Supply Voltage-Min (Vsup) :

2.7V

Terminal Pitch :

1.27mm

Operating Mode :

SYNCHRONOUS

Height Seated (Max) :

2.65mm