S25FL256SDSMFBG13

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

1.27mm

Alternate Memory Width :

2

Voltage - Supply :

2.7V~3.6V

Number of Terminations :

16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

-40°C~105°C TA

Supply Voltage-Min (Vsup) :

2.7V

Surface Mount :

yes

Write Cycle Time - Word, Page :

750µs

Length :

10.3mm

Programming Voltage :

3V

Organization :

64MX4

Memory Density :

268435456 bit

Memory Format :

Flash

Memory Size :

256Mb 32M x 8

JESD-30 Code :

R-PDSO-G16

Clock Frequency :

80MHz

Screening Level :

AEC-Q100

Series :

FL-S

Additional Feature :

ALSO CONFIGURABLE AS 256M X 1

Factory Lead Time :

13 Weeks

Memory Width :

4

Supply Voltage :

3V

Memory Type :

Non-Volatile

Packaging :

Tape and Reel (TR)

Operating Mode :

SYNCHRONOUS

Write Cycle Time-Max (tWC) :

500ms

Supply Voltage-Max (Vsup) :

3.6V

Number of Functions :

1

Width :

7.5mm

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Memory Interface :

SPI - Quad I/O

Mounting Type :

Surface Mount

Parallel/Serial :

Serial

Height Seated (Max) :

2.65mm