S25FL129P0XMFI010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Write Cycle Time-Max (tWC) :

50ms

Memory Width :

8

Access Time :

8 ns

Programming Voltage :

3V

HTS Code :

8542.32.00.51

Word Size :

1b

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-40°C~85°C TA

Endurance :

100000 Write/Erase Cycles

Supply Voltage-Min (Vsup) :

2.7V

Terminal Position :

Dual

Supply Voltage :

3V

Radiation Hardening :

No

Terminal Pitch :

1.27mm

Data Bus Width :

8B

Number of Pins :

16

Supply Voltage-Max (Vsup) :

3.3V

JESD-609 Code :

e3

Interface :

SPI, Serial

Memory Interface :

SPI - Quad I/O

Power Supplies :

3/3.3V

Nominal Supply Current :

38mA

Clock Frequency :

104MHz

Number of Terminations :

16

Voltage - Supply :

2.7V~3.6V

Memory Type :

Non-Volatile

RoHS Status :

ROHS3 Compliant

Write Cycle Time - Word, Page :

5µs, 3ms

Density :

128 Mb

Mount :

Surface Mount

Memory Format :

Flash

Sync/Async :

SYNCHRONOUS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Height Seated (Max) :

2.65mm

Address Bus Width :

1b

ECCN Code :

3A991.B.1.A

Standby Current-Max :

0.00001A

Number of Functions :

1

Serial Bus Type :

SPI

Memory Size :

128Mb 16M x 8

Write Protection :

HARDWARE/SOFTWARE

Packaging :

Tray

Length :

10.3mm

Data Retention Time-Min :

20

Page Size :

256B

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Series :

FL-P

Mounting Type :

Surface Mount