S25FL128SAGMFB010

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Finish :

Matte Tin (Sn)

Clock Frequency :

133MHz

Memory Density :

134217728 bit

Supply Voltage-Min (Vsup) :

2.7V

Factory Lead Time :

13 Weeks

Supply Voltage-Max (Vsup) :

3.6V

Memory Interface :

SPI - Quad I/O

Mounting Type :

Surface Mount

Number of Terminations :

16

Alternate Memory Width :

2

Programming Voltage :

3V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Height Seated (Max) :

2.65mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Length :

10.3mm

Memory Width :

4

Additional Feature :

ALSO CONFIGURABLE AS 128M X 1

Memory Type :

Non-Volatile

Write Cycle Time-Max (tWC) :

500ms

Operating Temperature :

-40°C~105°C TA

Supply Voltage :

3V

JESD-30 Code :

R-PDSO-G16

HTS Code :

8542.32.00.51

Packaging :

Tray

Number of Functions :

1

Memory Format :

Flash

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Memory Size :

128Mb 16M x 8

Voltage - Supply :

2.7V~3.6V

Width :

7.5mm

Screening Level :

AEC-Q100

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Interface :

SPI, Serial

Terminal Position :

Dual

Organization :

32MX4

Terminal Pitch :

1.27mm

Operating Mode :

SYNCHRONOUS

Series :

FL-S

Peak Reflow Temperature (Cel) :

NOT SPECIFIED