RBV810

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Mfr.Part #
RBV810
Manufacturer
EIC Semiconductor, Inc.
Package / Case
4-SIP, RBV-25
Datasheet
Download
Description
BRIGDE RECTIFIER 8A 1000V, CASE
Stock
700
In Stock :
700

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Manufacturer :
EIC Semiconductor, Inc.
Product Category :
Diodes - Bridge Rectifiers
Package Width :
4.9(Max)
Peak Average Forward Current (A) :
8
Supplier Device Package :
RBV-25
Package Height :
20(Max)
Military :
No
Product Status :
Active
HTS :
8541.10.00.80
Pin Count :
4
Voltage - Peak Reverse (Max) :
1 kV
Supplier Package :
RBV25
Bridge Type :
Single Phase
Mounting Type :
Through Hole
Operating Temperature :
-40°C ~ 150°C (TJ)
Minimum Operating Temperature (°C) :
-40
Current - Average Rectified (Io) :
8 A
Diode Type :
Single Phase
Current - Reverse Leakage @ Vr :
10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If :
1 V @ 4 A
Mounting :
Through Hole
Series :
-
Standard Package Name :
RBV25
Package :
Bag
Package / Case :
4-SIP, RBV-25
Peak Reverse Current (uA) :
10
Technology :
Standard
Maximum Operating Temperature (°C) :
150
Peak RMS Reverse Voltage (V) :
700
Package Length :
30(Max)
Peak Forward Voltage (V) :
1@4A
Peak Reverse Repetitive Voltage (V) :
1000
ECCN (US) :
EAR99
PCB changed :
4
Peak Non-Repetitive Forward Surge Current (A) :
300
Configuration :
Single
RoHS Status :
RoHS Compliant
Datasheets
RBV810
Introducing Diodes - Bridge Rectifiers EIC Semiconductor, Inc. RBV810 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-40°C ~ 150°C (TJ), Package / Case:4-SIP, RBV-25, RBV810 pinout, RBV810 datasheet PDF, RBV810 amp .Beyond Diodes - Bridge Rectifiers EIC Semiconductor, Inc. RBV810 ,we also offer MB2S-E3/80, DF08S-T, DBF310-13, Our vast inventory has you covered. Contact us now for immediate solutions.



Single Phase -40°C ~ 150°C (TJ) 4-SIP, RBV-25

RBV810 Overview


In the datasheets, 1@4A is stated as the peak forward voltage.In order to operate efficiently, this device should have a peak RMS reverse voltage range of 700.The maximum peak reverse voltage for this device is 1 kV, according to the applicable device specifications.

RBV810 Features


the forward peak voltage is 1@4A
the peak RMS reverse voltage range of 700


RBV810 Applications


There are a lot of EIC Semiconductor
RBV810 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
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