RB521S30,115

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Single

Element Configuration :

Single

Number of Terminations :

2

Pin Count :

2

Number of Pins :

2

Speed :

Small Signal =< 200mA (Io), Any Speed

Power Dissipation :

275mW

Application :

EFFICIENCY

Current - Reverse Leakage @ Vr :

30μA @ 10V

Number of Phases :

1

Reference Standard :

AEC-Q101; IEC-60134

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Operating Temperature - Junction :

150°C Max

Published :

2009

Base Part Number :

RB521S30

Diode Type :

Schottky

Packaging :

Tape and Reel (TR)

Capacitance @ Vr, F :

25pF @ 1V 1MHz

Max Reverse Voltage (DC) :

30V

Voltage - Forward (Vf) (Max) @ If :

500mV @ 200mA

Terminal Form :

Flat

Contact Plating :

Tin

Max Operating Temperature :

150°C

Diode Element Material :

SILICON

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Forward Voltage :

500mV

Number of Elements :

1

Mount :

Surface Mount

Forward Current :

200mA

Peak Non-Repetitive Surge Current :

1A

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Max Surge Current :

1A

Reverse Voltage :

30V

Package / Case :

SC-79, SOD-523

Average Rectified Current :

200mA

Peak Reverse Current :

2.5μA

Mounting Type :

Surface Mount

Max Repetitive Reverse Voltage (Vrrm) :

30V