RB521CS30L315

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Forward Voltage :

280mV

ECCN Code :

EAR99

Reference Standard :

AEC-Q101; IEC-60134

JESD-609 Code :

e3

Max Reverse Voltage (DC) :

30V

Pin Count :

2

Mount :

Surface Mount

Number of Terminations :

2

Diode Element Material :

SILICON

Max Repetitive Reverse Voltage (Vrrm) :

30V

Current - Reverse Leakage @ Vr :

10μA @ 10V

Package / Case :

SOD-882

Application :

EFFICIENCY

Number of Phases :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Number of Pins :

2

Terminal Finish :

Tin (Sn)

Max Forward Surge Current (Ifsm) :

3A

Forward Current :

100mA

Packaging :

Tape and Reel (TR)

Diode Type :

Schottky

Number of Elements :

1

Speed :

Small Signal =< 200mA (Io), Any Speed

Radiation Hardening :

No

Output Current-Max :

0.1A

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Reverse Test Voltage :

10V

Operating Temperature - Junction :

150°C Max

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Peak Non-Repetitive Surge Current :

3A

Peak Reverse Current :

2µA

Published :

2010

Average Rectified Current :

100mA

HTS Code :

8541.10.00.70

Max Power Dissipation :

565mW

Capacitance @ Vr, F :

8pF @ 1V 1MHz

Voltage - Forward (Vf) (Max) @ If :

350mV @ 10mA