QST3TR
- Mfr.Part #
- QST3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A TSMT6
- Stock
- 5,833
- In Stock :
- 5,833
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Terminal Finish :
- TIN SILVER COPPER
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 270
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector (Ic) (Max) :
- 5A
- Max Collector Current :
- 5A
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 40mA, 2A
- Collector Emitter Breakdown Voltage :
- 30V
- Transition Frequency :
- 200MHz
- Published :
- 2004
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Factory Lead Time :
- 20 Weeks
- Number of Terminations :
- 6
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 6
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 30V
- Base Part Number :
- QST
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 6
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1.25W
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Gain Bandwidth Product :
- 200MHz
- Transistor Element Material :
- SILICON
- Datasheets
- QST3TR

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QST3TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 500mA 2V.When VCE saturation is 250mV @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 5A volts can be achieved.
QST3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 40mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
QST3TR Applications
There are a lot of ROHM Semiconductor
QST3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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