QST3TR
- Mfr.Part #
- QST3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A TSMT6
- Stock
- 5,833
- In Stock :
- 5,833
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Current - Collector (Ic) (Max) :
- 5A
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.25W
- Gain Bandwidth Product :
- 200MHz
- Pin Count :
- 6
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 6
- Transition Frequency :
- 200MHz
- hFE Min :
- 270
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Max Collector Current :
- 5A
- Factory Lead Time :
- 20 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 40mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Terminal Finish :
- TIN SILVER COPPER
- Published :
- 2004
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Base Part Number :
- QST
- Number of Pins :
- 6
- Datasheets
- QST3TR

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
QST3TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 500mA 2V.When VCE saturation is 250mV @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 5A volts can be achieved.
QST3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 40mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
QST3TR Applications
There are a lot of ROHM Semiconductor
QST3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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