PZU12B3,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Power Dissipation :

550mW

HTS Code :

8541.10.00.50

Impedance :

10Ohm

Current - Reverse Leakage @ Vr :

100nA @ 9V

Impedance-Max :

10Ohm

Voltage Tolerance :

2%

Max Power Dissipation :

310mW

Packaging :

Tape and Reel (TR)

Peak Reverse Current :

100nA

Max Reverse Leakage Current :

100μA

Forward Voltage :

1.1V

Number of Terminations :

2

Test Current :

5mA

Number of Elements :

1

ECCN Code :

EAR99

Reference Standard :

IEC-60134

Tolerance :

±2%

Operating Temperature :

-65°C~150°C

Terminal Form :

Flat

Pin Count :

2

Mount :

Surface Mount

Voltage - Forward (Vf) (Max) @ If :

1.1V @ 100mA

Zener Voltage :

12.34V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Reference Voltage :

12V

JESD-609 Code :

e3

Radiation Hardening :

No

Base Part Number :

PZU12

Diode Type :

ZENER DIODE

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Polarity :

Unidirectional

Element Configuration :

Single

Package / Case :

SC-90, SOD-323F

Working Voltage :

12V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Diode Element Material :

SILICON

Mounting Type :

Surface Mount

Voltage Tol-Max :

2%

Number of Pins :

2