PUMT1,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Radiation Hardening :

No

Max Power Dissipation :

200 mW

Collector Emitter Saturation Voltage :

200 mV

Series :

*

Number of Elements :

2

Max Frequency :

100 MHz

Frequency :

100 MHz

Width :

1.35 mm

Gain Bandwidth Product :

100 MHz

Max Collector Current :

100 mA

Element Configuration :

Dual

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5 V

Collector Emitter Voltage (VCEO) :

40 V

Collector Base Voltage (VCBO) :

50 V

Height :

1 mm

Mount :

Surface Mount

Package :

Bulk

Min Operating Temperature :

-65 °C

Collector Emitter Breakdown Voltage :

40 V

Power Dissipation :

200 mW

Number of Pins :

6

Base Product Number :

PUMT1

Max Breakdown Voltage :

40 V

Transition Frequency :

100 MHz

Polarity :

PNP

Length :

2.2 mm

Product Status :

Active

Max Operating Temperature :

150 °C

RoHS :

Compliant