PTVS64VP1UTP115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~185°C TA

Max Power Dissipation :

600W

Mount :

Surface Mount

Type :

Zener

Leakage Current :

100nA

Test Current :

1mA

Peak Pulse Power :

600W

Reverse Standoff Voltage :

64V

Mounting Type :

Surface Mount

Power Line Protection :

No

Number of Pins :

2

Factory Lead Time :

4 Weeks

Base Part Number :

PTVS64V

Peak Pulse Current :

5.8A

Diode Element Material :

SILICON

Package / Case :

SOD-128

Direction :

Unidirectional

Clamping Voltage :

103V

Number of Unidirectional Channels :

1

Published :

2011

Series :

Automotive, AEC-Q101

Applications :

Automotive

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Reverse Breakdown Voltage :

71.1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Max Reverse Leakage Current :

100nA

JESD-609 Code :

e3

Number of Terminations :

2

Voltage - Clamping (Max) @ Ipp :

103V

Breakdown Voltage :

71.1V

Pin Count :

2

Current - Peak Pulse (10/1000μs) :

5.8A

ECCN Code :

EAR99

Number of Elements :

1

Terminal Form :

Flat