PTVS58VS1UR115
- Mfr.Part #
- PTVS58VS1UR115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOD-123W
- Datasheet
- Download
- Description
- NOW NEXPERIA PTVS58VS1UR TRANS V
- Stock
- 14,586
- In Stock :
- 14,586
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Mount :
- Surface Mount
- Voltage - Clamping (Max) @ Ipp :
- 93.6V
- Max Reverse Leakage Current :
- 100nA
- Unidirectional Channels :
- 1
- Peak Pulse Current :
- 4.3A
- Test Current :
- 1mA
- Operating Temperature :
- -55°C~150°C TA
- Pin Count :
- 2
- ECCN Code :
- EAR99
- Published :
- 2011
- Applications :
- Automotive
- Number of Pins :
- 2
- Breakdown Voltage :
- 64.4V
- Power Line Protection :
- No
- Terminal Position :
- Dual
- Power Dissipation :
- 400W
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Clamping Voltage :
- 93.6V
- Peak Pulse Power :
- 400W
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Reverse Breakdown Voltage :
- 64.4V
- Type :
- Zener
- Diode Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- PTVS*S1UR
- Termination :
- SMD/SMT
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Leakage Current :
- 100nA
- Mounting Type :
- Surface Mount
- Max Surge Current :
- 4.3A
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Supply Voltage :
- 58V
- Packaging :
- Tape and Reel (TR)
- Direction :
- Unidirectional
- Package / Case :
- SOD-123W
- Reverse Standoff Voltage :
- 58V
- Max Breakdown Voltage :
- 67.8V
- Datasheets
- PTVS58VS1UR115
PTVS58VS1UR115 Documents

Specialized ICs NXP Semiconductors PTVS58VS1UR115 Overview
The Specialized ICs NXP Semiconductors PTVS58VS1UR115 is a state-of-the-art Transient Voltage Suppression (TVS) diode designed to protect sensitive electronic equipment from voltage spikes and surges. This component offers robust surge protection solutions, making it an essential element in safeguarding circuit integrity in a variety of applications. Manufactured by NXP Semiconductors, a leader in the semiconductor industry, this TVS diode is engineered to provide reliable performance under extreme conditions, ensuring that electronic devices operate with optimal functionality and longevity.
Key Features
The Specialized ICs NXP Semiconductors PTVS58VS1UR115 TVS diode stands out for its high surge protection capability, which can handle up to 58 volts stand-off voltage, effectively mitigating the risk of damage due to electrical transients. The diode's low clamping voltage ensures that the protected components are exposed to minimal stress during voltage spikes. Additionally, its fast response time is critical in responding to surges and spikes promptly, thus providing superior protection. The device is also RoHS compliant, reflecting NXP's commitment to environmental sustainability.
Applications
This TVS diode is particularly suited for protecting high-performance circuits in a wide range of industries including telecommunications, automotive electronics, and consumer electronic devices. It is especially valuable in applications where durability and reliability are paramount, such as in GPS systems, automotive control systems, and mobile communication devices. The robust design of the Specialized ICs NXP Semiconductors PTVS58VS1UR115 ensures that it is a reliable choice for high-stress environments where superior surge protection is necessary.
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