PTVS10VS1UR,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Test Current :

1mA

Applications :

Automotive

Diode Element Material :

SILICON

Operating Supply Voltage :

10V

Terminal Position :

Dual

Number of Elements :

1

Mount :

Surface Mount

Lead Free :

Lead Free

Max Power Dissipation :

400W

Breakdown Voltage :

11.1V

Unidirectional Channels :

1

Published :

2011

Max Breakdown Voltage :

12.3V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TA

Power Dissipation :

400W

Time@Peak Reflow Temperature-Max (s) :

30

Leakage Current :

2.5μA

Factory Lead Time :

4 Weeks

Pin Count :

2

Package / Case :

SOD-123W

Clamping Voltage :

17V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Breakdown Voltage :

11.1V

Termination :

SMD/SMT

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Base Part Number :

PTVS*S1UR

Max Reverse Leakage Current :

2.5μA

Type :

Zener

Peak Pulse Current :

23.5A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Direction :

Unidirectional

Peak Pulse Power :

400W

Number of Terminations :

2

Reverse Standoff Voltage :

10V

Element Configuration :

Single

Max Surge Current :

23.5A

Power Line Protection :

No

Number of Pins :

2

Series :

Automotive, AEC-Q101

Voltage - Clamping (Max) @ Ipp :

17V