PN5138_D26Z
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- Mfr.Part #
- PN5138_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A TO92-3
- Stock
- 18,848
- In Stock ：
- 18,848
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 500mA
- Supplier Device Package :
- TO-92-3
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Power - Max :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Datasheets
- PN5138_D26Z
PNP -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN5138_D26Z Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 30V.
PN5138_D26Z Features
the DC current gain for this device is 50 @ 10mA 10V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the supplier device package of TO-92-3
PN5138_D26Z Applications
There are a lot of ON Semiconductor
PN5138_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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