PN3567_D26Z
- Mfr.Part #
- PN3567_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 41,646
- In Stock :
- 41,646
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-92-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 1V
- Power - Max :
- 625mW
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector (Ic) (Max) :
- 600mA
- Datasheets
- PN3567_D26Z

NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN3567_D26Z Overview
In this device, the DC current gain is 40 @ 150mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 15mA, 150mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 40V.
PN3567_D26Z Features
the DC current gain for this device is 40 @ 150mA 1V
the vce saturation(Max) is 250mV @ 15mA, 150mA
the supplier device package of TO-92-3
PN3567_D26Z Applications
There are a lot of ON Semiconductor
PN3567_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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