PN100A_D26Z
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- Mfr.Part #
- PN100A_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92-3
- Stock
- 8,834
- In Stock ：
- 8,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- PN100
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Frequency - Transition :
- 250MHz
- Power - Max :
- 625mW
- Current - Collector (Ic) (Max) :
- 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 50nA
- Supplier Device Package :
- TO-92-3
- Datasheets
- PN100A_D26Z
NPN -55°C~150°C TJ 50nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
PN100A_D26Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 10mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 200mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (45V maximal voltage).
PN100A_D26Z Features
the DC current gain for this device is 300 @ 10mA 1V
the vce saturation(Max) is 400mV @ 20mA, 200mA
the supplier device package of TO-92-3
PN100A_D26Z Applications
There are a lot of ON Semiconductor
PN100A_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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