PMV25ENEA

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.024Ohm

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

JESD-30 Code :

R-PDSO-G3

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

460mW Ta 6.94W Tc

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Series :

Automotive, AEC-Q101

JEDEC-95 Code :

TO-236AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Published :

2016

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Transistor Application :

SWITCHING

Surface Mount :

yes

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

597pF @ 15V

Drain Current-Max (Abs) (ID) :

5.5A

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

3

Reference Standard :

AEC-Q101; IEC-60134

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

24m Ω @ 5.5A, 10V

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3