PMN120ENE

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Mfr.Part #
PMN120ENE
Manufacturer
Nexperia
Package / Case
SC-74, SOT-457
Datasheet
Download
Description
NEXPERIA, PMN120ENE - 60V, N-CHA
Stock
26,859
In Stock :
26,859

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Manufacturer :
Nexperia
Product Category :
Specialized ICs
FET Type :
N-Channel
Vgs (Max) :
±20V
Factory Lead Time :
4 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
275pF @ 30V
Package / Case :
SC-74, SOT-457
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
3.1A Ta
Rds On (Max) @ Id, Vgs :
123m Ω @ 2.4A, 10V
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
1.4W Ta 6.25W Tc
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
2.7V @ 250μA
Gate Charge (Qg) (Max) @ Vgs :
7.4nC @ 10V
Datasheets
PMN120ENE
Introducing Specialized ICs Nexperia PMN120ENE from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-74, SOT-457, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, PMN120ENE pinout, PMN120ENE datasheet PDF, PMN120ENE amp .Beyond Specialized ICs Nexperia PMN120ENE ,we also offer AD8232ACPZ-R7, TDA21470AUMA1, DS2413P+, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PMN120ENE


Specialized ICs Nexperia PMN120ENE Overview


The Specialized ICs Nexperia PMN120ENE is a high-performance, N-channel MOSFET designed for efficient power management in a variety of applications. It features a low on-resistance of just 123m Ω at 2.4A and 10V, which ensures minimal power loss and enhances overall system efficiency. With a maximum gate-source voltage of ±20V and a drain-source voltage of 60V, this MOSFET can handle rigorous conditions while maintaining stability and reliability. The input capacitance of 275pF at 30V and a gate charge of 7.4nC at 10V highlight its responsive characteristics, making it suitable for high-speed switching applications. The device is packaged in an SC-74, SOT-457 format, optimizing it for compact designs.


Specialized ICs Nexperia PMN120ENE Key Features


This MOSFET offers several key features that make it a preferred choice for power regulation requirements:

  • Low on-resistance of 123m Ω at 2.4A and 10V, facilitating reduced power loss and improved efficiency.
  • High maximum drain-source voltage of 60V, suitable for robust applications.
  • Gate-source voltage tolerance of ±20V, providing flexibility in a range of electrical circuits.
  • Input capacitance of 275pF at 30V, allowing for effective high-speed switching.
  • Gate charge of 7.4nC at 10V, enabling fast gate switching times.
  • Compact SC-74, SOT-457 package, ideal for space-sensitive applications.

Specialized ICs Nexperia PMN120ENE Applications


The Specialized ICs Nexperia PMN120ENE MOSFET is versatile enough to be used in various high-demand sectors:

  • LCD/LED TV and other consumer electronics requiring efficient power management.
  • Consumer appliances that demand reliable and durable power switching.
  • LED lighting systems where energy efficiency is crucial.
  • Uninterruptible Power Supply (UPS) systems for critical power backup needs.
  • AC-DC Power Supplies used in industrial and telecommunications sectors.
  • Synchronous Rectification for ATX1 Server, I Telecom PSU.
  • Motor drives and UPS for industrial automation.
  • Micro Solar Inverters, enhancing the efficiency of renewable energy systems.
  • DC/DC converters critical for voltage regulation in portable devices.
  • Power tools requiring robust and reliable power management solutions.
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