PMEG3010EP,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Packaging :

Tape and Reel (TR)

Published :

2008

Max Operating Temperature :

150°C

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Capacitance @ Vr, F :

170pF @ 1V 1MHz

Package / Case :

SOD-128

Average Rectified Current :

1A

Mount :

Surface Mount

Max Power Dissipation :

625mW

Max Repetitive Reverse Voltage (Vrrm) :

30V

Factory Lead Time :

4 Weeks

Number of Elements :

1

Number of Pins :

2

Max Surge Current :

50A

Number of Terminations :

2

Operating Temperature - Junction :

150°C Max

Max Reverse Voltage (DC) :

30V

Forward Current :

1A

Min Operating Temperature :

-55°C

Terminal Position :

Dual

Diode Type :

Schottky

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reverse Current :

1.5mA

Max Reverse Leakage Current :

1.5mA

JESD-609 Code :

e3

Element Configuration :

Single

Voltage - Forward (Vf) (Max) @ If :

360mV @ 1A

Radiation Hardening :

No

Lead Free :

Lead Free

Base Part Number :

PMEG3010

RoHS Status :

ROHS3 Compliant

Peak Non-Repetitive Surge Current :

50A

Pin Count :

2

Diode Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Output Current-Max :

1A

Forward Voltage :

360mV

Terminal Form :

Flat

Current - Reverse Leakage @ Vr :

1.5mA @ 30V