PMEG2010EPA,115

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Rectifiers - Single

Package / Case :

3-PowerUDFN

Reverse Recovery Time :

50 ns

Number of Elements :

1

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Published :

2007

Peak Reverse Current :

1.9mA

Terminal Position :

Dual

Average Rectified Current :

1A

Number of Terminations :

3

Mounting Type :

Surface Mount

Capacitance @ Vr, F :

175pF @ 1V 1MHz

Number of Pins :

3

Output Current-Max :

1A

Mount :

Surface Mount

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Max Operating Temperature :

150°C

Peak Non-Repetitive Surge Current :

17A

Diode Type :

Schottky

Terminal Finish :

Tin (Sn)

Max Repetitive Reverse Voltage (Vrrm) :

20V

Packaging :

Tape and Reel (TR)

Forward Voltage :

375mV

Base Part Number :

PMEG2010

Min Operating Temperature :

-55°C

Recovery Time :

50 ns

Current - Reverse Leakage @ Vr :

1.9mA @ 20V

Element Configuration :

Common Anode

Max Surge Current :

17A

Radiation Hardening :

No

Case Connection :

CATHODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

0.96W

Operating Temperature - Junction :

150°C Max

Diode Element Material :

SILICON

Max Reverse Voltage (DC) :

20V

Voltage - Forward (Vf) (Max) @ If :

375mV @ 1A

Pin Count :

3

Max Reverse Leakage Current :

1.9mA