PMDT290UNE115

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Fall Time (Typ) :

31 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-563, SOT-666

Continuous Drain Current (ID) :

800mA

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 10V

Power - Max :

500mW

Pin Count :

6

Drain to Source Breakdown Voltage :

20V

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.38Ohm

Rise Time :

4ns

Max Power Dissipation :

500mW

Element Configuration :

Dual

Lead Free :

Lead Free

Turn-Off Delay Time :

86 ns

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

380m Ω @ 500mA, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.8A

Factory Lead Time :

4 Weeks

Max Dual Supply Voltage :

20V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

950mV @ 250μA

Gate to Source Voltage (Vgs) :

8V

Series :

Automotive, AEC-Q101, TrenchMOS™

Transistor Element Material :

SILICON

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Published :

2011

FET Feature :

Logic Level Gate

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

Transistor Application :

SWITCHING

Number of Pins :

6

Radiation Hardening :

No

Turn On Delay Time :

6 ns

Power Dissipation :

390mW