PMDT290UNE115

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Transistor Application :

SWITCHING

Package / Case :

SOT-563, SOT-666

Fall Time (Typ) :

31 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Number of Terminations :

6

Max Dual Supply Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

0.68nC @ 4.5V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

0.38Ohm

Turn On Delay Time :

6 ns

Published :

2011

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

380m Ω @ 500mA, 4.5V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 10V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Elements :

2

Series :

Automotive, AEC-Q101, TrenchMOS™

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Number of Pins :

6

FET Type :

2 N-Channel (Dual)

Radiation Hardening :

No

Max Power Dissipation :

500mW

Power - Max :

500mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Element Configuration :

Dual

Power Dissipation :

390mW

Continuous Drain Current (ID) :

800mA

Vgs(th) (Max) @ Id :

950mV @ 250μA

Rise Time :

4ns

Drain Current-Max (Abs) (ID) :

0.8A

Turn-Off Delay Time :

86 ns