PMD5001K,115
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- Mfr.Part #
- PMD5001K,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- IC MOSFET DRIVER SC-59A
- Stock
- 38,316
- In Stock ：
- 38,316
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Special Purpose
- JESD-30 Code :
- R-PDSO-G3
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Configuration :
- Single
- Voltage - Rated :
- 40V
- Collector Current-Max (IC) :
- 0.1A
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP + Base-Emitter Diode
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Published :
- 2006
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin
- Current Rating (Amps) :
- 100mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- DC Current Gain-Min (hFE) :
- 24
- Collector-Emitter Voltage-Max :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Applications :
- Gate Driver
- Datasheets
- PMD5001K,115
PMD5001K,115 datasheet pdf and Transistors - Special Purpose product details from NXP USA Inc. stock available at
PMD5001K,115 Description
The metal – oxide – semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
PMD5001K,115 Features
· Pb-Free Package is Available
PMD5001K,115 Applications
Memory Termination Requlator for DDRDDR2
DDR3.DDR3Land DDR4 VTT Termination
Low-Voltage Applications for 1-V to 6-VInput Rails
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