PHE13009/DG,127
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- Mfr.Part #
- PHE13009/DG,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- NOW WEEN - PHE13009 - POWER BIPO
- Stock
- 4,980
- In Stock ：
- 4,980
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 12A
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1.6A, 8A
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 80W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PHE13009/DG,127
NPN 150°C TJ 100μA TO-220-3 Tube Through Hole
PHE13009/DG,127 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 1.6A, 8A.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.
PHE13009/DG,127 Features
the DC current gain for this device is 8 @ 5A 5V
the vce saturation(Max) is 2V @ 1.6A, 8A
PHE13009/DG,127 Applications
There are a lot of WeEn Semiconductors
PHE13009/DG,127 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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