PH3330L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SC-100, SOT-669

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

245 mJ

Published :

2008

Drain-source On Resistance-Max :

0.0033Ohm

HTS Code :

8541.29.00.95

Surface Mount :

yes

Series :

TrenchMOS™

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Number of Terminations :

4

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G4

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation-Max :

62.5W Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

100A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

4840pF @ 12V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

300A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

30.5nC @ 4.5V