PCP1208-TD-H
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- Mfr.Part #
- PCP1208-TD-H
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.7A PCP
- Stock
- 2,099
- In Stock ：
- 2,099
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Surface Mount :
- yes
- Current - Collector (Ic) (Max) :
- 700mA
- Collector Emitter Saturation Voltage :
- 115mV
- Emitter Base Voltage (VEBO) :
- 8V
- Collector Emitter Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e6
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 35mA, 350mA
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Gain Bandwidth Product :
- 120MHz
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Pin Count :
- 3
- Max Collector Current :
- 1.5A
- Published :
- 2012
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Power Dissipation :
- 1.3W
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 200mV
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 200V
- hFE Min :
- 200
- Collector Base Voltage (VCBO) :
- 220V
- Factory Lead Time :
- 2 Weeks
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- Datasheets
- PCP1208-TD-H
NPN 150°C TJ 1μA ICBO NPN TO-243AA Tape & Reel (TR) Surface Mount
PCP1208-TD-H Overview
In this device, the DC current gain is 200 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 115mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 35mA, 350mA.With the emitter base voltage set at 8V, an efficient operation can be achieved.There is a 200V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
PCP1208-TD-H Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 200mV @ 35mA, 350mA
the emitter base voltage is kept at 8V
PCP1208-TD-H Applications
There are a lot of ON Semiconductor
PCP1208-TD-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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