P6SMBJ85C

Manufacturer :

Diotec Semiconductor

Product Category :

Technology :

Avalanche

Terminal Form :

C BEND

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 3A, 4V

Non-rep Peak Rev Power Dis-Max :

600

Package Shape :

RECTANGULAR

Terminal Finish :

TIN LEAD

JESD-609 Code :

e0

Clamping Voltage-Max :

15.9

Configuration :

Single

Transistor Type :

PNP

Power - Max :

130W

Qualification Status :

Not Qualified

Terminal Position :

Dual

Power Dissipation-Max :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

180V

JEDEC-95 Code :

DO-214AA

Polarity :

Bidirectional

Breakdown Voltage-Max :

11.9

Mounting Type :

Through Hole

Current - Collector (Ic) (Max) :

15A

Additional Feature :

UL RECOGNIZED

Surface Mount :

yes

Current - Collector Cutoff (Max) :

100µA (ICBO)

Frequency - Transition :

20MHz

Diode Element Material :

SILICON

Package / Case :

TO-3P-3, SC-65-3

JESD-30 Code :

R-PDSO-C2

Diode Type :

TRANS VOLTAGE SUPPRESSOR DIODE

Breakdown Voltage-Min :

9.44

Supplier Device Package :

TO-3P

Vce Saturation (Max) @ Ib, Ic :

2V @ 500mA, 5A

Operating Temperature :

150°C (TJ)

Number of Elements :

1

Series :

--

Packaging :

Bulk

Number of Terminals :

2

Rep Pk Reverse Voltage-Max :

8.5