P6SMBJ8.5C

Manufacturer :

Diotec Semiconductor

Product Category :

Technology :

Avalanche

Voltage - Collector Emitter Breakdown (Max) :

180V

Terminal Finish :

TIN LEAD

Power Dissipation-Max :

5

Rep Pk Reverse Voltage-Max :

8.5

Frequency - Transition :

20MHz

Non-rep Peak Rev Power Dis-Max :

600

Current - Collector Cutoff (Max) :

100µA (ICBO)

Series :

--

Additional Feature :

UL RECOGNIZED

Breakdown Voltage-Min :

9.44

JEDEC-95 Code :

DO-214AA

Vce Saturation (Max) @ Ib, Ic :

2V @ 500mA, 5A

Clamping Voltage-Max :

15.9

Current - Collector (Ic) (Max) :

15A

Package / Case :

TO-3P-3, SC-65-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

130W

Terminal Position :

Dual

Operating Temperature :

150°C (TJ)

Diode Element Material :

SILICON

Terminal Form :

C BEND

Diode Type :

TRANS VOLTAGE SUPPRESSOR DIODE

Configuration :

Single

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 3A, 4V

Surface Mount :

yes

Transistor Type :

PNP

Package Shape :

RECTANGULAR

Number of Elements :

1

Breakdown Voltage-Max :

11.9

Supplier Device Package :

TO-3P

Polarity :

Bidirectional

JESD-30 Code :

R-PDSO-C2

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Number of Terminals :

2

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED