NX3020NAKV115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

0.44nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5 ns

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

200mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

1.2V

Fall Time (Typ) :

17 ns

Number of Elements :

2

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2013

Max Power Dissipation :

375mW

Factory Lead Time :

4 Weeks

Rise Time :

5ns

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

30V

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 100mA, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

34 ns

Power - Max :

375mW

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

13pF @ 10V

Number of Channels :

2

Surface Mount :

yes

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount