NX3020NAKV115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Number of Pins :

6

Max Power Dissipation :

375mW

Max Dual Supply Voltage :

30V

Published :

2013

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Power - Max :

375mW

Gate Charge (Qg) (Max) @ Vgs :

0.44nC @ 4.5V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

1.2V

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

30V

Number of Channels :

2

Fall Time (Typ) :

17 ns

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

200mA

Mounting Type :

Surface Mount

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

34 ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

13pF @ 10V

Rise Time :

5ns

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 100mA, 10V

Turn On Delay Time :

5 ns