NV25010DWHFT3G

Manufacturer :

onsemi

Product Category :

Memory

Supply Voltage-Max (Vsup) :

5.5V

Number of Terminations :

8

Serial Bus Type :

SPI

Write Cycle Time-Max (tWC) :

4ms

Factory Lead Time :

4 Weeks

Height Seated (Max) :

1.75mm

Parallel/Serial :

Serial

Length :

4.9mm

Memory Type :

Non-Volatile

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JESD-609 Code :

e4

Memory Interface :

SPI

Operating Mode :

SYNCHRONOUS

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-30 Code :

R-PDSO-G8

Memory Format :

EEPROM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Organization :

128X8

Memory Size :

1Kb 128 x 8

Operating Temperature :

-40°C~150°C TA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Write Cycle Time - Word, Page :

4ms

Memory Density :

1024 bit

Surface Mount :

yes

Voltage - Supply :

2.5V~5.5V

Clock Frequency :

10MHz

Pbfree Code :

yes

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Width :

3.9mm

Number of Functions :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supply Voltage :

5V

Published :

2008

Series :

Automotive, AEC-Q100

Terminal Pitch :

1.27mm

Access Time :

40ns

Supply Voltage-Min (Vsup) :

2.5V

Mounting Type :

Surface Mount

Memory Width :

8