NTE5817HC

Manufacturer :

NTE Electronics, Inc.

Product Category :

Diodes - Rectifiers - Single

Non-rep Pk Forward Current-Max :

400 A

Reverse Current-Max :

10 µA

Operating Temp Range :

-55C to 125C

Voltage - Forward (Vf) (Max) @ If :

1 V @ 10 A

Terminal Form :

Wire

Package Shape :

Round

Polarity :

Standard

JESD-30 Code :

O-PALF-W2

Package / Case :

Axial

Package :

Bag

Length :

63.5 mm

Max Operating Temperature :

150 °C

Number of Elements :

1

Manufacturer :

NTE Electronics

Rad Hardened :

No

Diode Type :

Standard

ECCN Code :

EAR99

Max Forward Surge Current (Ifsm) :

400 A

Breakdown Voltage-Min :

1000 V

Peak Forward Voltage :

1(V)

Number of Terminals :

2

Mounting :

Through Hole

Product Status :

Active

Forward Current :

10 A

Supplier Device Package :

Axial

Voltage - DC Reverse (Vr) (Max) :

1000 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8541.10.00.80

Peak Non-Repetitive Surge Current :

400(A)

Max Repetitive Reverse Voltage (Vrrm) :

1 kV

Series :

-

Forward Voltage :

1(V)

Configuration :

Single

Diode Element Material :

SILICON

Mount :

Through Hole

Terminal Position :

Axial

Current - Average Rectified (Io) :

10A

Reverse Test Voltage :

1000 V

Capacitance @ Vr, F :

150pF @ 4V, 1MHz

Weight :

453.59237 mg

Additional Feature :

LOW LEAKAGE CURRENT

Pin Count :

2

Operating Temperature Classification :

Military

Product Height (mm) :

8.89(mm)

Schedule B :

8541100080

Operating Temperature - Junction :

-55°C ~ 125°C

Min Operating Temperature :

-55 °C

Element Configuration :

Single

Case Connection :

Isolated

Surface Mount :

No

Peak Rep Rev Volt :

1000(V)

Number of Phases :

1

Width :

6.35 mm

Mounting Type :

Through Hole

RoHS :

Compliant

Rev Curr :

10(uA)

Speed :

Standard Recovery >500ns, > 200mA (Io)

Reach Compliance Code :

Unknown

Number of Pins :

2

Peak Reverse Current :

10(uA)

Output Current-Max :

10 A

Rep Pk Reverse Voltage-Max :

1000 V

REACH SVHC :

No SVHC

Height :

6.35 mm

Current - Reverse Leakage @ Vr :

10 µA @ 1000 V