NSVBSP19AT1G
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- Mfr.Part #
- NSVBSP19AT1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.1A SOT223
- Stock
- 45,516
- In Stock ：
- 45,516
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 800mW
- Max Power Dissipation :
- 800mW
- Pin Count :
- 4
- Frequency - Transition :
- 70MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 400V
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- NSVBSP19AT1G
NPN -65°C~150°C TJ 20nA ICBO TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NSVBSP19AT1G Overview
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 4mA, 50mA means Ic has reached its maximum value(saturated).A maximum collector current of 100mA volts is possible.
NSVBSP19AT1G Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
NSVBSP19AT1G Applications
There are a lot of ON Semiconductor
NSVBSP19AT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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