NSVBCW68GLT1G
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- Mfr.Part #
- NSVBCW68GLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 4,028
- In Stock ：
- 4,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 225mW
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Max Power Dissipation :
- 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 1V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 20nA
- Max Collector Current :
- 800mA
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 700mV
- Datasheets
- NSVBCW68GLT1G
PNP -55°C~150°C TJ 20nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSVBCW68GLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 10mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 800mA volts can be achieved.
NSVBCW68GLT1G Features
the DC current gain for this device is 120 @ 10mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
NSVBCW68GLT1G Applications
There are a lot of ON Semiconductor
NSVBCW68GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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