NSVBC818-40LT1G

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Mfr.Part #
NSVBC818-40LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 25V 0.5A SOT23-3
Stock
34,461
In Stock :
34,461

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Frequency :
100MHz
Collector Base Voltage (VCBO) :
30V
Current - Collector (Ic) (Max) :
500mA
Emitter Base Voltage (VEBO) :
5V
Power Dissipation :
300mW
Max Power Dissipation :
225mW
Collector Emitter Voltage (VCEO) :
25V
Max Collector Current :
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100mA 1V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Mount :
Surface Mount
Collector Emitter Breakdown Voltage :
25V
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Package / Case :
TO-236-3, SC-59, SOT-23-3
Lead Free :
Lead Free
Published :
2013
Number of Elements :
1
Factory Lead Time :
4 Weeks
Radiation Hardening :
No
Datasheets
NSVBC818-40LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSVBC818-40LT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, NSVBC818-40LT1G pinout, NSVBC818-40LT1G datasheet PDF, NSVBC818-40LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSVBC818-40LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSVBC818-40LT1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

NSVBC818-40LT1G Overview


This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 500mA volts is possible.

NSVBC818-40LT1G Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


NSVBC818-40LT1G Applications


There are a lot of ON Semiconductor
NSVBC818-40LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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